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    • 专利摘要:
    As an insulating adhesive for electronic components for bonding a semiconductor chip to a lead frame, (A) The weight average molecular weight (Mw) by polystyrene conversion is 30,000-300,000, (B) The weight average molecular weight (Mw) / number average molecular weight (Mn ), A resin having a ratio of 5 or less, and a solvent, and (C) a viscosity at a rotational speed of 10 rpm measured at 25 ° C. with an E-type viscometer at 5,000 to 100,000 mPa · s and a viscosity ratio (η1 rpm / η10 rpm) of 1.0 to 6.0 Insulation adhesive for electronic components.
    公开号:KR20010025034A
    申请号:KR1020007012890
    申请日:1999-05-18
    公开日:2001-03-26
    发明作者:시미즈다께히로；다메시게가즈미；도도다까후미；마쯔우라히데까즈；노무라요시히로；쯔보사끼구니히로；시오쯔끼도시히로；스즈끼가즈나리；히가시노도모꼬
    申请人:우찌가사끼 이사오；히다찌 가세이 고오교 가부시끼가이샤；가나이 쓰도무；가부시끼가이샤 히다치 세이사꾸쇼；스즈키 진이치로；가부시기가이샤 히다치초엘에스아이시스템즈；
    IPC主号:
    专利说明:

    INSULATING ADHESIVE FOR ELECTRONIC PARTS, AND LEAD FRAME AND SEMICONDUCTOR DEVICE USING THE SAME}
    In recent years, in the semiconductor device, in order to cope with the increase in size of the semiconductor chip, a lead on chip (LOC) and a chip on lead (COL) structure are used as the package structure. As the LOC structure, an insulating resin film with an insulating adhesive layer is used for bonding the inner lead and the chip. As a manufacturing process of this semiconductor device, first, an insulating resin film having an insulating adhesive layer is prepared in advance, and it is punched by a mold and fixed on the lead frame, and then the semiconductor chip is mounted on the lead frame by thermocompression bonding. . In addition, a bonding wire such as a gold wire is used to connect the chip and the lead frame, and the resin is generally encapsulated.
    A semiconductor device using such an insulating resin film is an insulating resin generated due to the generation of burrs when punching an insulating resin film having an insulating adhesive layer with a mold, and the area of the insulating resin film actually used is very small. There is a problem such as poor product yield of the film or package cracks in solder reflow during substrate mounting due to hygroscopicity due to the material of the insulating resin film.
    The present invention relates to a semiconductor device, in particular an insulating adhesive for electronic components used for bonding a lead frame and a semiconductor chip (chip) constituting a semiconductor device having a lead on chip (LOC) and a chip on lead (COL) structure, and a lead using the same. Frames and semiconductor devices.
    1 is a plan view showing a lead frame and a semiconductor chip in one embodiment of a semiconductor device of the present invention.
    FIG. 2 (1) is a cross-sectional view of the semiconductor device of FIG. 1 taken along line B-B ', and FIG. 2 (2) is a cross-sectional view of the semiconductor device of FIG. 1 taken along line C-C'.
    3 is a plan view showing a lead frame and a semiconductor chip in one embodiment of the semiconductor device of the present invention.
    FIG. 4 (1) is a cross-sectional view of the semiconductor device of FIG. 3 taken along line AA ′, FIG. 4 (2) is a cross-sectional view of the semiconductor device of FIG. 3 taken along line BB ′, and FIG. It is sectional drawing which cut | disconnected the semiconductor device of 3 by CC 'line.
    An object of the present invention is to provide an insulating adhesive for electronic components for bonding a semiconductor chip and a lead frame in a semiconductor package not using an insulating resin film, a lead frame and a semiconductor device using the same.
    The present invention is an insulating adhesive for electronic parts for adhering a semiconductor chip to a lead frame, wherein (A) the weight average molecular weight (Mw) in terms of polystyrene is 30,000 to 300,000, and (B) the weight average molecular weight (Mw) / number The resin has a resin having a ratio of the average molecular weight (Mn) of 5 or less and a solvent, and (C) the viscosity at a rotational speed of 10 rpm measured at 25 ° C. with an E-type viscometer is 5,000 to 100,000 mPa · s, and the viscosity ratio (η1 rpm / η10 rpm) It provides an insulating adhesive agent (hereinafter sometimes called an insulating adhesive agent) for electronic components which is 1.0-6.0.
    The insulating adhesive for electronic components of the present invention has a contact angle between the insulating adhesive for electronic components and the lead frame when coated on a lead frame, and the aspect ratio before drying of the insulating adhesive for electronic components is 20 to 130 °, Moreover, it is preferable that the aspect ratio after drying is 0.005 or more.
    Moreover, when the insulating adhesive for electronic components of this invention apply | coats the insulating adhesive for electronic components on a lead frame, it is made to dry after moisture absorption, it is preferable that foaming temperature of the insulating adhesive for electronic components is 200 degreeC or more.
    Moreover, when the insulating adhesive for electronic components of this invention apply | coats the insulating adhesive for electronic components on a lead frame, it is made to dry after moisture absorption, it is preferable that the glass transition temperature of the insulating adhesive for electronic components is 100-250 degreeC. Do.
    Moreover, this invention provides the lead frame which has an adhesive bond layer formed by apply | coating the insulating adhesive for electronic components of this invention to a surface, and drying it.
    Moreover, this invention provides the semiconductor device which has a lead frame and the semiconductor chip adhere | attached to the lead frame by the insulating adhesive for electronic components of this invention.
    In the semiconductor device of this invention, it is preferable that a lead frame has the adhesive bond layer formed by apply | coating and drying the insulating adhesive for electronic components of this invention, and the semiconductor device is adhere | attached to the lead frame by the adhesive bond layer.
    In the semiconductor device of this invention, it is preferable that the area bonded by the insulating adhesive for electronic components is 0.05 to 20% of the semiconductor chip area.
    In the semiconductor device of the present invention, the inner lead of the lead frame is disposed on the main circuit surface of the semiconductor chip, the electrode pads on the semiconductor chip are connected by the inner lead and the fine metal wire, and the semiconductor chip, the inner lead and the fine metal wire are encapsulated. As a semiconductor device sealed with ash, it is preferable that two or more inner leads are a semiconductor device adhere | attached to a semiconductor chip with the insulating adhesive for electronic components.
    In the semiconductor device of the present invention, the inner lead of the lead frame is disposed on the main circuit surface of the semiconductor chip, the electrode pads on the semiconductor chip are connected by the inner lead and the fine metal wire, and the semiconductor chip, the inner lead and the fine metal wire are encapsulated. A semiconductor device encapsulated in ash, wherein an inner lead for a power supply is bonded to a semiconductor chip with an insulating adhesive for electronic components, and is spaced apart from the semiconductor chip without bonding an inner lead for a signal. It is preferable that the separation distance between the main circuit surface of the chip is larger than the separation distance between the power supply inner lead and the main circuit surface of the semiconductor chip.
    EMBODIMENT OF THE INVENTION Below, the insulating adhesive agent for electronic components of this invention, the lead frame using this, and a semiconductor device are demonstrated in detail.
    Resin used for this invention is resin which satisfy | fills the physical property of said (A) and (B), and when an insulating adhesive agent satisfy | fills the physical property of said (C), the insulation of this invention is carried out to the inner lead of a lead frame. In the case of applying the adhesive, there is no protruding from the lead frame and dripping of the liquid, and it has good workability that does not easily cause process defects in manufacturing a semiconductor device, that is, size defects, packaging defects, and in-process contamination. The insulating adhesive agent for electronic components can be obtained.
    As resin used for the insulating adhesive agent of this invention, a polyether resin, a polyester resin, a polyamide resin, a polyimide resin, a polyamideimide resin, a polyetheramide resin, an acrylic resin, an epoxy resin, a bismaleimide resin, a silicone resin Although a combination of these resins, etc. are mentioned, the insulating adhesive which satisfy | fills the physical property of (C) when satisfy | filling the physical property of said (A) and (B), and using it with a solvent as an adhesive can be formed. If it exists, you may use another resin without a restriction | limiting in particular.
    In the said resin, resin in the content of the amide group, imide group, and epoxy group which are polar groups in the range of 1-50 weight%, More preferably, 10-40 weight% is preferable in order to acquire the outstanding adhesive strength. Moreover, you may add suitably crosslinking agents, a coupling agent, a coloring agent, such as an epoxy resin and bismaleimide resin, as needed.
    Among the various resins described above, polyamideimide resins and polyimide resins are preferable, and aromatic polyamideimide resins and aromatic polyimide resins are more preferable from the viewpoint of excellent heat resistance and insulation.
    The weight average molecular weight by polystyrene conversion of resin used for this invention becomes 30,000-300,000, and 50,000-150,000 are preferable. When the weight average molecular weight is less than 30,000, not only the workability at the time of application | coating falls but also the hardened film after adhesion | coating is weak, and the heat-reliability of a semiconductor device falls. Moreover, when weight average molecular weight exceeds 300,000, the solubility to a solvent is inferior and the adhesiveness to a lead frame also falls.
    The ratio (Mw / Mn) of the weight average molecular weight (Mw) and the number average molecular weight (Mn) of the resin used in the present invention is 5 or less, and the range of 1.5 to 3 is preferable. When the ratio (Mw / Mn) of the weight average molecular weight and the number average molecular weight exceeds 5, the wettability with the lead frame is poor, and the workability is deteriorated because the liquid flows down and the water is generated. It also degrades heat resistance.
    In addition, in this specification, the measurement of a weight average molecular weight and a number average molecular weight is performed using the calibration curve of standard polystyrene by gel permeation chromatography.
    As a coupling agent added as needed, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltris ((beta) -methoxyethoxy) silane, (beta)-(3, 4- epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, N-β- (aminoethyl) -γ-aminopropylmethyldimethoxysilane, γ-aminopropyltriethoxysilane, N Silane coupling agents, such as -phenyl- (gamma) -aminopropyl trimethoxysilane and (gamma)-mercaptopropyl trimethoxysilane, titanate coupling agent, aluminate coupling agent, a zicoaluminate coupling agent, etc. are mentioned. have. When adding a coupling agent, the quantity is 0.01 to 20 weight% normally with respect to resin, Preferably it is 0.1 to 10 weight%.
    When mix | blending a coloring agent, the quantity is 0.1-50 weight% normally with respect to resin, Preferably it is 3-30 weight%.
    As a solvent used for the insulating adhesive agent of this invention, if it melt | dissolves used resin, it will not specifically limit, but aromatic solvents, such as benzene, toluene, xylene; Ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone and cyclohexanone; Ether solvents such as diethyl ether, diisopropyl ether, tetrahydrofuran, dioxane, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, diethylene glycol dimethyl ether and diethylene glycol diethyl ether; Ethyl acetate, n-propyl acetate, isopropyl acetate, n-butyl acetate, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene Ester solvents such as glycol monoethyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, and γ-butyrolactone; Amide solvents, such as dimethylformamide, dimethylacetamide, and N-methylpyrrolidone, etc. can be illustrated. These solvents can be used individually or in combination of 2 or more types.
    Among the above solvents, amide solvents such as N-methylpyrrolidone and dimethylformamide and ester solvents such as ethylene glycol monobutyl ether acetate are preferable from the viewpoint of excellent solubility and versatility.
    The amount of the solvent used for the insulating adhesive of the present invention is preferably set to an amount such that the ratio of the resin to the total amount of the solvent and the resin is 5 to 40% by weight, more preferably 10 to 30% by weight. And it is more preferable to set it as the quantity used as 15-25 weight%.
    In the present invention, in order to control the fluidity of the insulating adhesive, for example, silica, alumina, zirconia, titania, calcium carbonate, magnesium carbonate, magnesium oxide, diamond powder, quartz powder, resins such as inorganic fillers such as mica, fluororesins, and the like. Fillers (organic fillers), acrylic rubbers, butadiene rubbers, rubber fillers such as nitrile rubbers and silicone rubbers may be added. When adding these fillers, it is preferable to set it as 10-200 weight% with respect to the quantity of resin, and, as for the addition amount, it is more preferable to set it as 15-100 weight%.
    The viscosity of the insulating adhesive agent of this invention is 5,000-100,000 mPa * s, and the viscosity in rotation speed 10rpm measured at 25 degreeC with the E-type viscosity meter is 7,000-60,000 mPa * s. If the viscosity of the insulating adhesive is less than 5,000 mPa · s, liquid from the leadframe may flow down, and if the viscosity of the insulating adhesive exceeds 100,000 mPa · s, application to the leadframe is difficult, and voids are likely to occur after drying.
    The viscosity ratio ((eta) 1rpm / (eta) 10rpm) of the insulating adhesive agent of this invention becomes 1.0-6.0, and 1.0-3.0 are preferable. Generally, a viscosity ratio does not become less than 1.0, and when a viscosity ratio exceeds 6.0, the fluidity | liquidity of an insulating adhesive and workability of application | coating will fall.
    As the insulating adhesive agent of this invention, it is preferable that the contact angles of the insulating adhesive agent and the lead frame at the time of apply | coating on a lead frame are 20 degrees-130 degrees. When the contact angle is less than 20 °, the flow of liquid from the lead frame is large, the film thickness of the adhesive on the lead frame is thin, the inclination of the semiconductor chip is likely to occur, and the lead frame and the semiconductor chip are in contact with each other, thereby resulting in poor conduction. Tends to cause In addition, there is a tendency that the encapsulant is not sufficiently drawn between the semiconductor chip and the lead frame, which causes a decrease in the reliability of the semiconductor device. In addition, when the contact angle exceeds 130 °, there is a tendency that a defect due to shock occurs at the time of application to the lead frame.
    In this invention, it is preferable that it is 0.05-2.0, and, as for the aspect ratio before drying when apply | coating an insulating adhesive agent on a lead frame, 0.1-1.0 are more preferable. When the aspect ratio before drying is less than 0.05, the coating amount on the lead frame decreases, and the adhesion strength at the time of bonding the semiconductor chip tends to decrease. Moreover, when the aspect ratio before drying exceeds 2.0, it will become easy for an adhesive agent to adhere to the back surface of an inner lead, and there exists a tendency for the wire bonding of an inner lead and a semiconductor chip to become impossible. In this specification, an aspect ratio means the value which divided the height of the adhesive agent apply | coated on the lead frame by the diameter of the bottom face of an adhesive agent, and shows the applicability | paintability of an adhesive agent.
    Moreover, in this invention, it is preferable that the aspect ratio after apply | coating an insulating adhesive agent on a lead frame and drying is 0.005 or more. When the aspect ratio after drying is less than 0.005, the thickness of the adhesive layer is so thin that the mechanical impact at the time of adhesion to the semiconductor chip is not absorbed, and the adhesive strength tends to be insufficient.
    The aspect ratio before and after drying of the said insulating adhesive agent can be adjusted with the filler added in order to control the molecular weight of a resin, a solvent, or fluidity.
    In this invention, when an insulating adhesive is apply | coated on a lead frame, it is made to dry, and it is made to moisture-absorb, it is preferable that foaming temperature of this insulating adhesive is 200 degreeC or more, and it is more preferable that it is 230 degreeC or more. If the foaming temperature is less than 200 ° C., the solder reflow resistance of the semiconductor package is not good, and package cracking tends to occur during solder reflow.
    In this invention, it is preferable that the glass transition temperature of the insulating adhesive for electronic components is 100-250 degreeC when the insulating adhesive for electronic components is apply | coated on a lead frame, and it is made to dry after moisture absorption. When the glass transition temperature at the time of moisture absorption is less than 100 degreeC, there exists a tendency for a package crack to generate | occur | produce at the time of solder reflow. Moreover, when the glass transition temperature at the time of moisture absorption exceeds 250 degreeC, the temperature at the time of adhesion | attachment of a semiconductor chip will become high and it exists in the tendency to impair workability and reliability.
    In this specification, drying of the insulating adhesive at the time of measuring an aspect ratio, foaming temperature, and glass transition temperature means removing a solvent from an insulating adhesive by heating.
    The lead frame of this invention is obtained by apply | coating the insulating adhesive of this invention to the predetermined position on a lead frame, and drying and forming the precure adhesive layer. It does not restrict | limit especially as a coating method, What is necessary is just to select suitably the dispensing method, the printing method, the stamping method, etc. Moreover, the drying temperature of the insulating adhesive agent of this invention is not specifically limited, It can select suitably according to a solvent and a density | concentration. Moreover, it is not necessary to remove the solvent in an adhesive completely by this drying. After forming the adhesive layer on the lead frame in this manner, the semiconductor chip is mounted through the adhesive layer and heated and pressed to bond the lead frame and the semiconductor chip.
    As a lead frame, if it is normally used for a semiconductor device, it can use without a restriction | limiting, For example, a 42 alloy lead frame, a Cu lead frame, a metal plating lead frame, etc. are used preferably.
    In the semiconductor device of the present invention, the semiconductor chip and the lead frame are bonded by the insulating adhesive agent of the present invention. The insulating adhesive agent of this invention may be used independently, may be apply | coated directly to a semiconductor chip, and the thing in which the precure was apply | coated on the lead frame previously may be used.
    Bonding of a semiconductor chip and a lead frame is normally performed on the conditions of the temperature of 70-400 degreeC, the pressure of 0.05-10 kg / cm <2>, and pressurization time 0.1-3 second.
    In this invention, it is preferable that it is 0.05 to 20% of the surface area which adjoins with an insulating adhesive agent with respect to the lead frame of a semiconductor chip, and it is more preferable that it is 0.1 to 10%. When the area bonded by the insulating adhesive is less than 0.05% of the semiconductor chip area, the adhesive force between the lead frame and the semiconductor chip decreases, and the semiconductor chip tends to fall off during transport or bonding of the bonding wires. Moreover, when the area adhere | attached with an insulating adhesive exceeds 20% of a semiconductor chip area, there exists a tendency for a package crack to occur easily at the time of solder reflow.
    Moreover, the fall of the said adhesive force or the package crack at the time of solder reflow can also be prevented by adjusting the aspect ratio at the time of apply | coating an insulating adhesive, foaming temperature, and glass transition temperature at the time of moisture absorption.
    In one embodiment of the semiconductor device of the present invention, the inner lead of the lead frame is disposed on the main circuit surface of the semiconductor chip, the electrode pads on the semiconductor chip are connected by the inner lead and the fine metal wire, and the semiconductor chip, the inner lead and the fine metal wire In the semiconductor device sealed by this sealing material, it is preferable that two or more inner leads are a semiconductor device adhere | attached to a semiconductor chip with the insulating adhesive for electronic components of this invention. If only one inner lead is a semiconductor device bonded to a semiconductor chip with an insulating adhesive for electronic components, the balance is poor, and the semiconductor chip tends to be inclined, or the semiconductor chip is likely to fall off during bonding or bonding wire bonding.
    1 and 2 show the semiconductor device. Fig. 1 is a plan view showing the inside of the semiconductor device shown above, Fig. 2 (1) is a cross sectional view taken along the line BB ′ of Fig. 1, and Fig. 2 (2) is a cross sectional view taken along the line CC ′ of Fig. 1. Both the power supply inner lead 1 and the signal inner lead 2 are bonded to the main circuit surface 3 of the semiconductor chip 4 with the insulating adhesive 6 for electronic components of the present invention. This structure can be taken when the capacitance between the signal inner lead 2 and the main circuit surface 3 of the semiconductor chip does not adversely affect the performance of the semiconductor device. The electrode pads 5 on the main circuit surface 3 of the semiconductor chip 4 are connected by the signal inner lead 2 and the metal thin wires 7, and the semiconductor chips 4, the inner leads 1, 2, and the metal are connected to each other. The thin wire 7 is sealed with the sealing material 8.
    In another aspect of the semiconductor device of the present invention, the inner lead of the lead frame is disposed on the main circuit surface of the semiconductor chip, the electrode pads on the semiconductor chip are connected to the inner lead by fine metal wires, and the semiconductor chip, inner lead and metal In a semiconductor device in which thin wires are encapsulated with an encapsulant, an inner lead for a power supply is bonded to a semiconductor chip with the insulating adhesive for electronic components of the present invention, and the inner signal for the signal is not bonded to the semiconductor chip, and is spaced apart from the semiconductor chip. It is preferable that the distance between the main circuit surface of the semiconductor chip is greater than the distance between the power supply inner lead and the main circuit surface of the semiconductor chip. If the separation distance between the signal inner lead and the main circuit surface of the semiconductor chip is smaller than the separation distance between the power supply inner lead and the main circuit surface of the semiconductor chip, the capacitance between the signal inner lead and the main circuit surface of the semiconductor chip is It tends to adversely affect the performance of a semiconductor device, or to easily contact a metal wire with an inner lead for a power supply.
    3 and 4 show the semiconductor device shown above. Fig. 3 is a plan view showing the inside of the semiconductor device shown above, Fig. 4 (1) is a sectional view taken along the line AA 'of Fig. 3, and Fig. 4 (2) is a sectional view taken along the line BB' of Fig. 3, and Fig. 4 ( 3) is sectional drawing of the CC 'line | wire of FIG. Only two sets of inner leads (busbars) 1 for power supply penetrating the central longitudinal direction of the semiconductor chip 4 are bonded to the main circuit surface 3 of the semiconductor chip with the insulating adhesive 6 for electronic components of the present invention. When the capacitance between the signal inner lead 2 and the main circuit surface 3 of the semiconductor chip 4 adversely affects the performance of the semiconductor device, the main circuit of the signal inner lead 2 and the semiconductor chip 4 This problem can be avoided by making the separation distance a between the surface 3 larger than the separation distance b between the power supply inner lead 1 and the main circuit surface 3 of the semiconductor chip 4. At the same time, when the electrode pad 5 and the tip of the signal inner lead 2 are connected with the metal thin wire 7 on the chip, the metal thin wire 7 is hard to contact the inner lead 1 of the power supply. Excellent assembly work.
    Although the elasticity modulus of the insulating adhesive agent for electronic components used for this invention is not specifically limited, It is preferable that the elasticity modulus in 200-270 degreeC is 1 MPa or more, and it is more preferable that it is 10 MPa or more. In addition, this elasticity modulus means the elasticity modulus in 200-270 degreeC at the time of hardening an insulating adhesive agent completely.
    The coating method of the insulating adhesive for electronic components used for this invention is not specifically limited, What is necessary is just to select suitably the dispensing method, the printing method, the stamping method, etc. Moreover, the drying temperature of the insulating adhesive agent for electronic components used for this invention is not specifically limited, It can select suitably according to a solvent and a density | concentration.
    The method of using the insulating adhesive for electronic components of the present invention for bonding the semiconductor chip and the lead frame is not particularly limited, and a method most suitable for each package can be appropriately selected.
    The insulating adhesive agent for electronic components which has the physical property of this invention can be used for a semiconductor device, without using a conventional film-like insulating adhesive agent, and can provide the semiconductor device excellent in reliability.
    EXAMPLE
    Although an Example demonstrates this invention in detail below, this invention is not limited to this.
    Synthesis Example 1
    3.895 g (9.5 m) of BAPP (2,2-bis [4- (4-aminophenoxy) phenyl] propane) in a 50 ml inlet flask with a stirrer, thermometer, nitrogen gas introduction tube and calcium chloride tube Mol) and 0.125 g (0.5 mmol) of silicon diamine (1,3-bis (aminopropyl) tetramethyldisiloxane) are dissolved in 23.0 g of N-methylpyrrolidone (NMP) and then cooled to 5 ° C. or lower. 2.13 g (10 mmol) of trimellitic acid crawlide were added. 2.02 g (20 mmol) of triethylamine was added, and after making it react for 5 hours at 5 degrees C or less, it heated at 180 degreeC for 5 hours, and synthesize | combined polyamideimide.
    The precipitate obtained by adding water to the wax of the obtained polyamideimide was separated, pulverized and dried to obtain a polyamideimide powder.
    Synthesis Example 2
    2.74 g (7.5 mmol) of IPDDM (4,4'-diamino-3,3 ', 5,5'-tetraisopropyldiphenylmethane) and 1.025 g of BAPP instead of BAPP and siliconediamine used in Synthesis Example 1 2.5 mmol) was used, and the same procedure as in Synthesis Example 1 was carried out except that 5.76 g (10 mmol) of BABT (bisphenol A bistrimellitate 2 anhydride) was used instead of the anhydrous trimellitic acid crawlide used in Synthesis Example 1. To obtain a polyimide powder.
    Synthesis Example 3
    Synthesis Example 1 except that the amount of BAPP was changed to 2.87 g (7 mmol) and the amount of silicondiamine (1,3-bis (aminopropyl) tetramethyldisiloxane) was changed to 0.75 g (3 mmol). In the same manner, a polyamideimide powder was obtained.
    Synthesis Example 4
    Synthesis Example 1 except that the amount of BAPP was changed to 2.05 g (5 mmol) and the amount of silicon diamine (1,3-bis (aminopropyl) tetramethyldisiloxane) was changed to 1.25 g (5 mmol). In the same manner, a polyamideimide powder was obtained.
    In Examples and Comparative Examples to be described later, the production of the lead frame to which the insulating adhesive for electronic components is bonded, the manufacture of the semiconductor device, the molecular weight, the viscosity, the contact angle, the aspect ratio, the foaming temperature and the glass transition temperature are measured as follows. It was done.
    To the inner lead of the lead frame, 0.02 ml of an insulating adhesive for electronic parts manufactured using the resin powder was dispensed at 50 points as shown in Fig. 1, and then 90 ° C. for 10 minutes and 250 ° C. for 10 minutes (42 alloys). Lead frame) or a lead frame to which an insulating adhesive for an electronic component is bonded by drying by heating at 170 ° C. for 10 minutes (lead frame made of copper). The adhesive on the lead frame was observed to evaluate the dry film state.
    A 5.5 mm x 13.5 mm size semiconductor chip was thermocompressed (temperature: 380 ° C., pressure: 3 kg / cm 2, pressurization time: 3 seconds) on a lead frame to which the insulating adhesive for electronic components manufactured by the above method was bonded. Then, the distal end portion of the inner lead and the semiconductor chip were connected with a bonding wire to be sealed with a resin mold to manufacture a semiconductor device. As a sealing material, it used CEL-9200 of Hitachi Chemical Co., Ltd. make, It sealed on condition of 175 degreeC, 90 second, 100 kgf / cm <2>, and hardened at 175 degreeC for 6 hours.
    The ratio of the weight average molecular weight (Mw) and the weight average molecular weight (Mw) / number average molecular weight (Mn) of the said resin measured and computed the following using the gel permeation chromatogram (GPC: detector RI). 10 mg of the measuring resin was weighed into a sample tube, dissolved in 5 ml of THF, filtered through a filter to obtain a measuring sample, and standard polystyrene was used to prepare a calibration curve.
    Column: Hitachi Kasei Kogyo Co., Ltd. (2 GL-A-100 M) (connection)
    Column temperature: 25 ℃
    Eluent: THF
    Injection volume: 500 µl (100 µl of the sample used for measurement)
    The glass transition temperature (Tg) of the insulating adhesive for electronic components forms a film on the glass plate, and the film is dried at 90 ° C. for 10 minutes and 250 ° C. for 10 minutes to prepare a film-like sample, using a differential scanning calorimeter (DSC). Was measured under the following conditions.
    Measurement Condition: Temperature 30 ~ 330 ℃
    Temperature rise rate 10 ℃ / min
    Sample amount 10 mg
    Atmosphere Air 100 ml / min
    In addition, the glass transition temperature (Tgw) at the time of moisture absorption was measured in the presence of water by putting 10 weight% of purified water with respect to a sample and a sample weight in a high pressure sealed container.
    The viscosity of the said insulating adhesive for electronic components was measured at 25 degreeC using the 3 degree cone of the E-type viscosity meter (made by Nippon-Gage Corporation). In addition, the rotation speed of the cone at the time of the measurement measured the viscosity ((eta) 1 rpm) in case of 10 rpm, and the viscosity ((eta) 10 rpm) in case of 10.0 rpm. Furthermore, the obtained viscosity was adjusted to (eta) 1 rpm / (eta) 10 rpm, and the viscosity ratio was computed.
    The contact angle with the lead frame of the insulating adhesive for electronic components is dispensed by applying 0.02 ml of the insulating adhesive for electronic components to one point on the lead frame, and the contact angle gauge (CA) of Kyowa Chemical Co., Ltd. -D) was used and measured in a clean room at 25 ° C. and 60% RH.
    As for the aspect ratio of the said insulating adhesive for electronic components, 0.02 ml of insulating adhesives were dispensed apply | coated to one point on a lead frame on the lead frame, and the contact angle meter (CA-D) made from Kyowa Kaimen Kagaku Co., Ltd. was used. The coating shape was measured to calculate the aspect ratio before and after drying (heating at 90 ° C. for 10 minutes and 250 ° C. for 10 minutes (42 alloy lead frames), or 170 ° C. for 10 minutes (copper lead frames)) and after drying. . In addition, the chip adhesion was measured after mounting the semiconductor chip in the lead frame, the shear adhesion strength of the semiconductor chip.
    About the foaming temperature of the said insulating adhesive for electronic components, the insulating adhesive for electronic components was apply | coated and dried on a lead frame (90 degreeC 10 minutes and 250 degreeC 10 minutes (42 alloy lead frames), or 170 degreeC 10 minutes (copper) Lead frame) heating, immersed in water for 24 hours at room temperature and absorbed, and then prepared several hot plates set to a predetermined temperature, and placed the samples thereon, and read the temperature of the hot plates when foamed Temperature was made into foaming temperature.
    Solder reflow resistance of the semiconductor device using the said insulating component adhesive for electronic components carries out solder reflow in the infrared ray furnace of 245 degreeC after moisture absorption of the manufactured semiconductor device for 85 degreeC, 85% RH for 48 hours, and packaged The presence or absence of crack was confirmed by visual inspection and ultrasonic flaw detector (HYE-FOCUS manufactured by Hitachigen Co., Ltd.).
    Example 1
    Resin was synthesize | combined according to the synthesis example 1, and polyamideimide powder was obtained. The weight average molecular weight (Mw) was 80,000, and ratio (Mw / Mn) of the weight average molecular weight and number average molecular weight (Mn) was 1.5. The obtained resin was dissolved in 30% by weight of a mixed solvent of N-methylpyrrolidone (NMP) / ethylene glycol monobutyl ether acetate (BuCA) to prepare an adhesive. This adhesive agent was diluted with the NMP / BuCA mixed solvent (weight ratio 7/3), and the viscosity was adjusted to 30,000 mPa * s ((eta) 10 rpm). At this time, the resin concentration was 27% by weight, and the viscosity ratio (η1 rpm / η10 rpm) was 1.0.
    Next, the film | membrane which formed the adhesive agent of 30 weight% of resin concentration on a glass plate, and dried at 90 degreeC for 10 minutes, and 250 degreeC for 10 minutes was 225 degreeC, and Tg (Tgw) at the time of moisture absorption was 175 degreeC. It was. An adhesive having a resin concentration of 27% by weight was dispensed into a 42 alloy lead frame, and the contact angle with the lead frame, the dry film state, the aspect ratio before drying, the aspect ratio after drying, the chip adhesion, and the foaming temperature were measured. The results are shown in Table 1. Table 1 also shows the results of confirming the presence or absence of cracks in solder reflow resistance of the package.
    Comparative Example 1
    Table 1 shows the results measured in the same manner as in Example 1 except that the viscosity of the adhesive was 500 mPa · s (resin concentration: 12% by weight).
    Comparative Example 2
    To the adhesive having a resin concentration of 27% by weight in Example 1, 20% by weight of silica filler (FB-35, manufactured by Denki Kagyo Kogyo Co., Ltd.) was added to the resin, and the viscosity was set to 300,000 mPa · s (η 10 rpm). Except that, it measured similarly to Example 1 and measured. The results are shown in Table 1.
    Example 2
    Resin was synthesize | combined according to the synthesis example 2, and polyimide powder was obtained. The weight average molecular weight (Mw) was 120,000, and the ratio (Mw / Mn) of the weight average molecular weight and the number average molecular weight was 2.2. The obtained resin was dissolved in 30% by weight with dimethylformamide (DMF) to prepare an adhesive. In addition, Tg measured similarly to Example 1 was 250 degreeC, and Tg (Tgw) at the time of moisture absorption was 210 degreeC.
    The viscosity ratio ((eta) 1 rpm / (eta) 10 rpm) when the viscosity of the adhesive agent was diluted with DMF and adjusted to 50,000 mPa * s (resin concentration: 27 weight%) ((eta) 10 rpm) was 1.0. The result of having measured the dry film state, the contact angle with a lead frame, the aspect ratio before drying, the aspect ratio after drying, the chip | tip adhesive force, and foaming temperature using this adhesive agent of 27 weight% of resin concentration is shown in Table 1. Table 1 also shows the results of confirming the presence or absence of cracks in solder reflowability of the package.
    Example 3
    Resin was synthesize | combined by the synthesis example 3, and polyamideimide powder was obtained. The weight average molecular weight (Mw) was 60,000, and ratio (Mw / Mn) of the weight average molecular weight and number average molecular weight was 1.7. The obtained resin was melt | dissolved in 30 weight% with NMP, and also the silane coupling agent (SH-6040 made from Dow Dow Corning Silicone Co., Ltd.) of 10 weight% of resins was added, and the adhesive agent was manufactured. Moreover, Tg of the adhesive agent measured similarly to Example 1 was 180 degreeC, and Tg (Tgw) at the time of moisture absorption was 130 degreeC.
    The viscosity ratio (η1 rpm / η10 rpm) when the viscosity of the adhesive was diluted with NMP and adjusted to 8,000 mPa · s (concentration of the resin in the total amount of the resin and the solvent: 20 wt%) (η 10 rpm) was 1.0. . The result of having measured the dry film state, the contact angle with a lead frame, the aspect ratio before drying, the aspect ratio after drying, the chip | tip adhesive force, and foaming temperature using the adhesive agent of 20 weight% of this resin concentration is shown in Table 1. Table 1 also shows the results of confirming the presence or absence of cracks in solder reflowability of the package.
    Example 4
    Except having made trimellitic anhydride chloride 2.17g, it carried out similarly to the synthesis example 1, and obtained the polyamide-imide powder. The weight average molecular weight (Mw) was 110,000, and the ratio (Mw / Mn) of the weight average molecular weight and the number average molecular weight was 1.8. The obtained resin was melt | dissolved in 30 weight% with NMP, and also the silane coupling agent (SH-6040 made from Dow Dow Corning Silicone Co., Ltd.) of 10 weight% of resins was added, and the adhesive agent was manufactured. Tg of the adhesive agent measured similarly to Example 1 was 230 degreeC, and Tg (Tgw) at the time of moisture absorption was 190 degreeC.
    To the resin of the adhesive is added 20% by weight of a silicone filler (Torrepiru E-601, manufactured by Toray Downing Silicon), after which the viscosity is diluted by NMP and 40,000 mPas (the resin in the total amount of resin and solvent). Concentration: 23 weight%) The viscosity ratio ((eta) 1 rpm / (eta) 10 rpm) when adjusted to (eta10 rpm) was 1.5. The result of having measured the dry film state, the contact angle with a lead frame, the aspect ratio before drying, the aspect ratio after drying, the chip | tip adhesive force, and foaming temperature was measured using this adhesive agent of 23 weight% of resin concentration after viscosity adjustment. Table 1 also shows the results of confirming the presence or absence of cracks in solder reflowability of the package.
    Comparative Example 3
    Except having made trimellitic anhydride chloride 2.45g, the resin was synthesize | combined similarly to the synthesis example 1, and the polyamide-imide powder was obtained. The weight average molecular weight was 10,000, and ratio (Mw / Mn) of the weight average molecular weight and number average molecular weight was 1.4. Table 1 shows the results of evaluation in the same manner as in Example 1, with the viscosity adjustment of the adhesive being 3,000 mPa · s (resin concentration: 20 wt%) (η 10 rpm) in NMP.
    Comparative Example 4
    Resin was synthesize | combined according to the synthesis example 4, and polyamideimide powder was obtained. As a result of measuring the weight average molecular weight (Mw), the ratio (Mw / Mn) of 28,000, a weight average molecular weight, and a number average molecular weight was 1.6. The obtained resin was dissolved in 30% by weight with NMP to prepare an adhesive. Tg measured similarly to Example 1 was 140 degreeC, and Tg (Tgw) at the time of moisture absorption was 90 degreeC.
    The viscosity ratio ((eta) 1 rpm / (eta) 10 rpm) when the adhesive agent was diluted with NMP and adjusted to 8,000 mPa * s (resin concentration: 25 weight%) ((eta) 10 rpm) was 1.0. The result of having measured the dry film state, the contact angle with a lead frame, the aspect ratio before drying, the aspect ratio after drying, the chip | tip adhesive force, and foaming temperature using the adhesive agent of 25 weight% of this resin concentration is shown in Table 1. Table 1 also shows the results of confirming the presence or absence of cracks in solder reflowability of the package.
    Example 5
    A lead frame and a semiconductor chip were adhered as shown in Figs. 1 and 2 by using an adhesive having a resin concentration of 27% by weight prepared in Example 1, bonded with a bonding wire, and then resin-sealed to manufacture a semiconductor device. The sealing material was sealed on the conditions of 175 degreeC, 90 second, and 100 kgf / cm <2> using Hitachi Kasei Kogyo CEL-9200, and it hardened | cured at 175 degreeC for 6 hours. At this time, the adhesive was applied to the lead frame such that the adhesive area was 2% of the semiconductor chip area. After bonding the semiconductor chip, a drop test was performed at a height of 1 m, but the chip was not detached and exhibited good adhesion. In addition, the wire bond product yield also showed good workability.
    ItemExample 1Comparative Example 1Comparative Example 2Example 2Example 3Example 4Comparative Example 3Comparative Example 4 SuzyPolyamideimidePolyamideimidePolyamideimidePolyimidePolyamideimidePolyamideimidePolyamideimidePolyamideimide Mw80,00080,00080,000120,00060,000110,00010,00028,000 Mw / Mn1.51.51.52.21.71.81.41.6 Tg (℃)225225225250180230220140 Tgw (℃)17517517521013019016090 η 10 rpm (mPas)30,000500300,00050,0008,00040,0003,0008,000 η1 rpm / η10 rpm1.01.01.51.01.01.51.01.0 solventNMP / BuCANMP / BuCANMP / BuCADMFNMPNMPNMPNMP Contact Angle / Lead Frame40˚ / 42 alloy5˚ / 42 alloy70˚ / 42 alloy45˚ / 42 alloy30˚ / Cu50˚ / 42 alloyNot measurable40˚ / Cu Aspect Ratio (Before Drying)0.50.031.20.70.30.8Not measurable0.3 Aspect ratio (after drying)0.10.0030.40.20.070.3Not measurable0.05 Dry film conditionGoodThin film thickness There is return to the back sideVoidGoodGoodGoodWeak film prevents film formationGood Chip adhesion (kgf / chip)1.50.10.71.21.31.5Not measurable0.5 Foaming temperature (℃)230Not measurableNot measurable240200260Not measurable150 Solder Reflow Package CracksnonePackage not availablePackage not availablenonenonenoneNot measurablehas exist
    The use of the insulating adhesive for electronic components of the present invention provides a lead frame suitable for semiconductor devices having a lead on chip (LOC) and chip on lead (LOC) structure and a semiconductor device having excellent reliability.
    权利要求:
    Claims (13)
    [1" claim-type="Currently amended] As an insulating adhesive for electronic components for bonding a semiconductor chip to a lead frame, (A) The weight average molecular weight (Mw) by polystyrene conversion is 30,000-300,000, (B) The weight average molecular weight (Mw) / number average molecular weight (Mn ), A resin having a ratio of 5 or less, and a solvent, and (C) a viscosity at a rotational speed of 10 rpm measured at 25 ° C. with an E-type viscometer at 5,000 to 100,000 mPa · s and a viscosity ratio (η1 rpm / η10 rpm) of 1.0 to It is 6.0, The insulating adhesive for electronic components.
    [2" claim-type="Currently amended] The contact angle between the insulating adhesive for electronic components and the lead frame when applied onto the lead frame is 20 to 130 ° and the aspect ratio before drying the insulating adhesive for electronic components is 0.05 to 2.0, and the aspect after drying The insulating adhesive agent for electronic components whose ratio is 0.005 or more.
    [3" claim-type="Currently amended] The insulating adhesive for electronic components according to claim 1, wherein the foaming temperature of the insulating adhesive for electronic components is 200 deg. C or higher when the insulating adhesive for electronic components is applied on the lead frame, dried and then hygroscopic.
    [4" claim-type="Currently amended] The insulating adhesive for electronic components of Claim 1 whose glass transition temperature of the insulating adhesive for electronic components is 100-250 degreeC, when the insulating adhesive for electronic components is apply | coated on a lead frame, and it is made to dry after moisture absorption.
    [5" claim-type="Currently amended] The insulating adhesive for electronic parts according to claim 1, wherein the resin is a polyimide resin or a polyamideimide resin.
    [6" claim-type="Currently amended] The insulating adhesive for electronic parts according to claim 1, further comprising 0.01 to 20% by weight of a silane coupling agent based on the resin.
    [7" claim-type="Currently amended] The insulating adhesive for electronic parts according to claim 1, further comprising 10 to 200% by weight of a silicone rubber filler based on resin.
    [8" claim-type="Currently amended] The lead frame which has the adhesive bond layer formed by apply | coating the insulating adhesive for electronic components of Claim 1, and drying it to the surface.
    [9" claim-type="Currently amended] A semiconductor device comprising a lead frame and a semiconductor chip bonded to the lead frame by the insulating adhesive for electronic components according to claim 1.
    [10" claim-type="Currently amended] 10. The lead frame according to claim 9, wherein the lead frame has an adhesive layer formed by applying and drying the insulating adhesive for electronic components according to claim 1, and a semiconductor device is bonded to the lead frame by the adhesive layer. Semiconductor device.
    [11" claim-type="Currently amended] 10. The semiconductor device according to claim 9, wherein an area bonded by the insulating adhesive for electronic parts is 0.05 to 20% of the semiconductor chip area.
    [12" claim-type="Currently amended] 10. The method of claim 9, wherein the inner lead of the lead frame is disposed on the main circuit surface of the semiconductor chip, the electrode pads on the semiconductor chip are connected to the inner lead by fine metal wires, and the semiconductor chip, the inner lead and the fine metal wires are encapsulated with an encapsulant. The semiconductor device according to claim 1, wherein two or more inner leads are bonded to the semiconductor chip with an insulating adhesive for electronic components.
    [13" claim-type="Currently amended] 10. The method of claim 9, wherein the inner lead of the lead frame is disposed on the main circuit surface of the semiconductor chip, the electrode pads on the semiconductor chip are connected to the inner lead by fine metal wires, and the semiconductor chip, the inner lead and the fine metal wires are encapsulated with an encapsulant. In an insulated semiconductor device, an inner lead for a power supply is bonded to a semiconductor chip with an insulating adhesive for electronic components, and is disposed apart from the semiconductor chip without bonding the inner signal for the signal. The inner circuit of the signal inner lead and the semiconductor chip is disposed. And a separation distance between the power supply inner lead and the main circuit surface of the semiconductor chip is larger than the separation distance between the power supply inner lead and the semiconductor chip.
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    同族专利:
    公开号 | 公开日
    WO1999060622A1|1999-11-25|
    TWI241329B|2005-10-11|
    KR100421517B1|2004-03-09|
    US6445076B1|2002-09-03|
    EP1083595A4|2008-12-03|
    EP1083595A1|2001-03-14|
    DE99919639T1|2009-06-04|
    MY124687A|2006-06-30|
    JP3354558B2|2002-12-09|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1998-05-20|Priority to JP98-137851
    1998-05-20|Priority to JP13785198
    1999-05-18|Application filed by 우찌가사끼 이사오, 히다찌 가세이 고오교 가부시끼가이샤, 가나이 쓰도무, 가부시끼가이샤 히다치 세이사꾸쇼, 스즈키 진이치로, 가부시기가이샤 히다치초엘에스아이시스템즈
    2001-03-26|Publication of KR20010025034A
    2004-03-09|Application granted
    2004-03-09|Publication of KR100421517B1
    优先权:
    申请号 | 申请日 | 专利标题
    JP98-137851|1998-05-20|
    JP13785198|1998-05-20|
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